maximum ratings rating symbol value unit collectorCemitter voltage v ceo C 40 vdc collectorCbase voltage v cbo C 40 vdc emitterCbase voltage v ebo C 5.0 vdc collector current continuous i c C 600 madc thermal characteristics device marking mmbt4403w t1 = 2t electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (3) v (br)ceo vdc (i c = C1.0 madc, i b = 0) C 40 collectorCbase breakdown voltage v (br)cbo vdc (i c = C0.1madc, i e = 0) C 40 emitterCbase breakdown voltage v (br)ebo vdc (i e = C0.1madc, i c = 0) C 5.0 base cutoff current i bev adc (v ce = C35 vdc, v eb = C0.4 vdc) C 0.1 collector cutoff current i cex adc (v ce = C35 vdc, v eb = C0.4 vdc) C 0.1 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. general purpose transistors pnp silicon 2 emitter 3 collector 1 base device marking shipping MMBT4403WT1 2t 3000/t ape & reel ordering information compliance with rohs requirements. we declare that the material of product sot-323 1 3 2 characteristic symbol max unit total device dissipation fr?5 board t a = 25 c p d 150 mw thermal resistance, junction?to?ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c mm bt4403wt1 2012- 0 willas electronic corp. ? ?
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe CC (i c = C0.1 madc, v ce = C1.0 vdc) 30 CC (i c = C1.0 madc, v ce = C1.0 vdc) 60 CC (i c = C10 madc, v ce = C1.0 vdc) 100 CC (i c = C150 madc, v ce = C2.0 vdc)(3) 100 300 (i c = C500 madc, v ce = C2.0 vdc)(3) 20 CC collectorCemitter saturation voltage(3) v ce(sat) vdc (i c = C150madc, i b = C15 madc) CC C 0.4 (i c = C500 madc, i b = C50 madc) CC C 0.75 baseCemitter saturation voltage (3) v be(sat) vdc (i c = C150 madc, i b = C15 madc) C 0.75 C 0.95 (i c = C500 madc, i b = C50 madc) CC C 1.3 smallCsignal characteristics currentCgain bandwidth product f t mhz (i c = C20madc, v ce = C10 vdc, f = 100 mhz) 200 CC collectorCbase capacitance c cb pf (v cb = C10 vdc, i e = 0, f = 1.0 mhz) CC 8.5 emitterCbase capacitance c eb pf (v be = C0.5 vdc, i c = 0, f = 1.0 mhz) CC 30 input impedance h ie k ? (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 1.5 15 voltage feedback ratio h re x 10 C4 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 0.1 8.0 smallCsignal current gain h fe (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 60 500 output admittance h oe mhos (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) 1.0 100 switching characteristics delay time (v cc = C 30 vdc, v eb = C2.0 vdc, t d 1 5 rise time i c = C150madc, i b1 = C15 madc) t d 2 0n s storage time (v cc = C30 vdc, i c = C150 madc, t s 225 ns fall time i b1 = i b2 = C15 madc) t f 3 0 figure 1. turnCon time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k C 30 v 200 c s *< 10 pf 1.0 k C 30 v 200 c s * < 10 pf 1n916 C16 v C16 v < 20 ns <2.0 ns +2.0v + 14v figure 2. turnCoff time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits 0 0 1.0 to 100 s, duty cycle = 2% +4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2012- 0 willas electronic corp. general purpose transistors mm bt4403wt1
typical transient characteristics i c , collector current (ma) figure 4. charge data reverse voltage (volts) figure 3. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c eb c cb q a 10 20 30 50 70 100 200 300 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 capacitance (pf) t , time (ns) t r , rise time (ns) v cc = 30v i c / i b =10 t r @v cc =30v t r @v cc =10v t d @v be(off) = 2.0v t d @v be(off) = 0v i c /i b = 10 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 5. turnCon time i c , collector current (ma) figure 7. storage time t s , rise time (ns) t s = t s C 1/8 t f i b1 = i b2 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 i c /i b = 10 i c /i b = 20 q, charge (nc) 2012- 0 willas electronic corp. general purpose transistors mm bt4403wt1
mmbt4403w t1 unit 1 mmbt4403w t1 unit 2 h re , voltage feedback ratio (x 10 C4 ) h parameters (v ce = C10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other h parameters for this series of ransistors. to obtain these curves, a highCgain and a lowCgain unit were selected from the mmbt440 3w t1 lines, and the same units were used to develop the correspon dingly numbered curves on each graph. i c , collector current (madc) figure 10. current gain i c , collector current (madc) figure 12. voltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 1000 700 500 300 200 100 70 50 30 20 10 5.0 2.0 1.0 0.5 0.2 0.1 i c , collector current (madc) figure 11. input impedance h ie , input impedance (k ? ) 100 50 20 10 5 2 1 0.5 0.2 0.1 i c , collector current (madc) figure 13. output admittance h oe , output admittance ( mhos) 500 100 50 20 10 5.0 2.0 1.0 smallCsignal characteristics noise figure v ce = C10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 mmbt4403w t1 unit 1 mmbt4403w t1 unit 2 mmbt4403w t1 unit 1 mmbt4403w t1 unit 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 r s , source resistance ( ? ) figure 9. source resistance effects nf, noise figure (db) f = 1.0 khz 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1k 2k 5k 10k 20k 50k 10 8 6 4 2 0 f , frequency (khz) figure 8. frequency effects i c = 50 a 100 a 500 a 1.0 ma i c = 1.0 ma, r s = 430 ? i c = 500 a, r s = 560 ? i c = 50 a, r s = 2.7k ? i c = 100 a, r s = 1.6 k ? r s = optimum source resistance mmbt4403w t1 unit 1 mmbt4403w t1 unit 2 2012- 0 willas electronic corp. general purpose transistors mm bt4403wt1
static characteristics i c , collector current (ma) figure 14. dc current gain i b , base current (ma) figure 15. collector saturation region i c , collector current (ma) figure 16. on voltages i c , collector current (ma) figure 17. temperature coefficients h fe , normalized current gain v ce , collector emitter voltage (volts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce = 10 v 25c C55c 10 ma 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v, voltage ( volts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vs for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 0.8 0.6 0.4 0.2 0 + 0.5 0 C 0.5 C1.0 C1.5 C2.0 C 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2012- 0 willas electronic corp. general purpose transistors mm bt4403wt1
sot?323 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 soldering footprint* 2012- 0 willas electronic corp. general purpose transistors mm bt4403wt1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15)
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